Tuning Optical and Electrical Transport Properties in Zero-Dimensional Bismuth-Based Halide Rb<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> under High Pressure
Bismuth-based perovskite materials have attracted extensive attention due to their low toxicity and excellent optoelectronic properties. Herein, this investigation delves systematically into the influence of pressure on the structural stability, band gap evolution, and electrical transport properties of Rb<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>. With the pressure increase, the band gap of the specimen gradually diminishes, attaining an optimal semiconductor band gap of 1.34 eV at 12.8 GPa, accompanied by obvious piezochromism from red to black. A pressure-induced semiconductor-to-metal transition occurs at 15.8 GPa. Electrons serve as the principal charge carriers in electrical conduction, while grain boundary impedance dominates the impedance profile of the sample.
Authors
- Zi-Yu Cao (ORCID: https://orcid.org/0000-0002-4225-1583)
- Hicham Moutaabbid (ORCID: https://orcid.org/0000-0001-6891-2274)
- Cailong Liu (ORCID: https://orcid.org/0000-0003-0702-7225)
- Long Zhang (ORCID: https://orcid.org/0000-0002-5085-8609)
- Yabin Chen (ORCID: https://orcid.org/0000-0002-5180-2009)
- Dong Zhi-ying
Institutions
- Beijing Institute of Technology (CN)
- Centre National de la Recherche Scientifique (FR)
- Liaocheng University (CN)
- Peking University (CN)
- Sorbonne Université (FR)
- Institut de minéralogie, de physique des matériaux et de cosmochimie (FR)
- Zhuhai Institute of Advanced Technology (CN)
- Institut de Recherche pour le Développement (FR)
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2024-12-12
- DOI
- https://doi.org/10.1021/acs.jpclett.4c02968
- Citations
- 5
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Taishan Scholar Project of Shandong Province
- National Key Research and Development Program of China