The Effect of H+ Fluence Irradiation on the Optical, Structural, and Morphological Properties of ZnO Thin Films

Polycrystalline zinc oxide (ZnO) thin films were deposited on soda-lime glass substrates using the chemical spray pyrolysis method at 450 °C. The samples were irradiated with 8 keV H<sup>+</sup> ions at three different fluences using a Colutron ion gun. The effects of the irradiation on the structural, morphological, and optical properties were studied with different techniques, including Rutherford Backscattering Spectrometry (RBS), X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Ultraviolet and Visible Spectroscopy (UV-Vis). The results show that ion irradiation enhances crystallinity, narrowing the optical band gap. The changes in transmittance are related to defect formation within the material, which acts as light absorption and re-emission centers. A shifting of the film's preferred growth orientation to the c-axis and changing the grain morphology and size distribution was detected. We observed an increase in the lattice parameters observed after irradiation, suggesting an expansion of the crystalline structure due to ions incorporation and defects within the ZnO crystal lattice. The morphological study shows an increase in the average size of the large particles after irradiation. This change is attributed to the emergence of defects and nucleation centers during irradiation. The average size of small particles remained relatively constant after irradiation, suggesting that small particles are more stable and less susceptible to external influences, resulting in fewer changes due to irradiation.

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Publication Details

Journal
Materials
Published
2024-12-13
DOI
https://doi.org/10.3390/ma17246095
Citations
2
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
0.23

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article

The Effect of H+ Fluence Irradiation on the Optical, Structural, and Morphological Properties of ZnO Thin Films

B. Fuentes, J. López-Patiño, Alejandra López-Suárez, Dwight Acosta et al.
2 citations
Materials
ZnO doping and properties
0.23
article

The Effect of H+ Fluence Irradiation on the Optical, Structural, and Morphological Properties of ZnO Thin Films

B. Fuentes, J. López-Patiño, Alejandra López-Suárez, Dwight Acosta, Yaser D. Cruz-Delgado
article en
2 citations

Abstract

Polycrystalline zinc oxide (ZnO) thin films were deposited on soda-lime glass substrates using the chemical spray pyrolysis method at 450 °C. The samples were irradiated with 8 keV H<sup>+</sup> ions at three different fluences using a Colutron ion gun. The effects of the irradiation on the structural, morphological, and optical properties were studied with different techniques, including Rutherford Backscattering Spectrometry (RBS), X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Ultraviolet and Visible Spectroscopy (UV-Vis). The results show that ion irradiation enhances crystallinity, narrowing the optical band gap. The changes in transmittance are related to defect formation within the material, which acts as light absorption and re-emission centers. A shifting of the film's preferred growth orientation to the c-axis and changing the grain morphology and size distribution was detected. We observed an increase in the lattice parameters observed after irradiation, suggesting an expansion of the crystalline structure due to ions incorporation and defects within the ZnO crystal lattice. The morphological study shows an increase in the average size of the large particles after irradiation. This change is attributed to the emergence of defects and nucleation centers during irradiation. The average size of small particles remained relatively constant after irradiation, suggesting that small particles are more stable and less susceptible to external influences, resulting in fewer changes due to irradiation.

MaterialsVol. 17(24)
Universidad Nacional Autónoma de México (MX)
Universidad Carlos III de Madrid, Dirección General de Asuntos del Personal Académico, Universidad Nacional Autónoma de México
Openalex Percentile: Top 49%
ZnO doping and properties
0.23
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