Influence of Deposition Temperature ZrO₂ Thin Films Deposited on Transparent Conductive ITO Substrates

Abstract In this paper, ZrO 2 thin films were deposited by magnetron sputtering DC method on transparent electrode ITO, The effects of different deposition temperatures on the physical phase, surface morphology and electrical properties of ZrO 2 thin films are investigated. The films were amorphous when the deposition temperature was increased from room temperature(RT) to 260°C, and turn to the orthorhombic crystal when the temperature was increased to 350°C. At the deposition temperature of 260 °C, the ZrO2 film had a dense surface with a roughness of 2.94 nm.At 260 °C, the film exhibit the best electric performance with the lowest leakage current density 7.580×10 −4 A / cm 2 , and is not breakdown when electric field is up to 200K(V/cm).