Nanoscale Ferroelectric Programming of van der Waals Heterostructures
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in Al<sub>1-<i>x</i></sub>B<sub><i>x</i></sub>N (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction. This resist-free, high-resolution, contactless patterning method offers a new pathway to integrate ferroelectric films with a wide range of two-dimensional layers including transition-metal dichalcogenides (TMD), enabling arbitrary programming and top-down creation of multifunctional devices.
Authors
- Ian P. Mercer (ORCID: https://orcid.org/0000-0002-2535-5823)
- Josh Nordlander
- Qingrui Cao (ORCID: https://orcid.org/0000-0002-7838-1435)
- Jeremy Levy (ORCID: https://orcid.org/0000-0002-5700-2977)
- Dengyu Yang (ORCID: https://orcid.org/0000-0002-8282-9618)
- Muqing Yu (ORCID: https://orcid.org/0000-0002-0528-7712)
- John Hayden (ORCID: https://orcid.org/0000-0002-0055-0198)
- Patrick Irvin (ORCID: https://orcid.org/0000-0002-0248-2758)
- Benjamin Hunt (ORCID: https://orcid.org/0000-0002-5008-8042)
- Ranjani Ramachandran (ORCID: https://orcid.org/0009-0004-0595-7677)
- Erin Akyuz (ORCID: https://orcid.org/0009-0007-2908-6660)
- Jon-Paul Maria
Institutions
- Pennsylvania State University (US)
- University of Pittsburgh (US)
- Pittsburgh Quantum Institute (US)
- Carnegie Mellon University (US)
Publication Details
- Journal
- Nano Letters
- Published
- 2024-12-13
- DOI
- https://doi.org/10.1021/acs.nanolett.4c03574
- Citations
- 4
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.47
Funders
- U.S. Department of Energy
- University of Pittsburgh
- Carnegie Mellon University