Perspective on breakdown in Ga2O3 vertical rectifiers
While Ga2O3 rectifiers have shown promising performance, there is a lack of consensus on the significance of the few device breakdown results above 10 kV. We provide some perspective on how these are achieved and areas where a greater understanding of breakdown mechanisms, testing protocols, and wafer handling is needed to advance the technology.
Authors
- Jian-Sian Li (ORCID: https://orcid.org/0000-0002-2817-7612)
- Chao-Ching Chiang (ORCID: https://orcid.org/0000-0002-0447-8170)
- Yu‐Te Liao (ORCID: https://orcid.org/0000-0002-6868-6729)
- Hsiao-Hsuan Wan (ORCID: https://orcid.org/0000-0002-6986-8217)
- S. J. Pearton (ORCID: https://orcid.org/0000-0001-6498-1256)
- F. Ren (ORCID: https://orcid.org/0000-0001-9234-019X)
Institutions
- National Yang Ming Chiao Tung University (TW)
- University of Florida (US)
Publication Details
- Journal
- Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
- Published
- 2024-12-13
- DOI
- https://doi.org/10.1116/6.0004146
- Citations
- 5
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- Defense Threat Reduction Agency