Mott–vanadium dioxide-based memristors as artificial neurons for brain-inspired computing: a view on current advances

A review of correlated electron VO 2 -based memristors in neuromorphic circuitry towards memory computing and sensing applications.

Authors

Shikhar Misra (ORCID: https://orcid.org/0000-0001-8257-2878)
Aditya Kamat
Gurukrishna Kaleyathodi

Institutions

Indian Institute of Technology Kanpur (IN)

Publication Details

Journal: Journal of Materials Chemistry C
Published: 2024-12-13
DOI: https://doi.org/10.1039/d4tc03347g
Citations: 9
Primary Topic: Advanced Memory and Neural Computing
Type: article
Field-Weighted Citation Impact: 1.88

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article

Mott–vanadium dioxide-based memristors as artificial neurons for brain-inspired computing: a view on current advances

Shikhar Misra, Aditya Kamat, Gurukrishna Kaleyathodi

Dec 13, 2024

9 citations

Journal of Materials Chemistry C

Advanced Memory and Neural Computing

1.88

article

Mott–vanadium dioxide-based memristors as artificial neurons for brain-inspired computing: a view on current advances

Shikhar Misra, Aditya Kamat, Gurukrishna Kaleyathodi

December 13, 2024article en

9 citations

Abstract

A review of correlated electron VO 2 -based memristors in neuromorphic circuitry towards memory computing and sensing applications.

Journal of Materials Chemistry CVol. 13(3)

Indian Institute of Technology Kanpur (IN)

Openalex Percentile: Top 14%

Advanced Memory and Neural Computing

1.88

DOI Source OpenAlex

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Mott–vanadium dioxide-based memristors as artificial neurons for brain-inspired computing: a view on current advances — Shikhar Misra, Aditya Kamat, et al. · Journal of Materials Chemistry C (2024) | TGRS Research Map | TGRS