Zn diffusion mechanism in InGaAs infrared detector
By adopting the vacuum sealed-ampoule technique, P-type doping of Zn elements in the lattice-mismatched NInAs<sub>0.6</sub>P<sub>0.4</sub>/i-In<sub>0.8</sub>Ga<sub>0.2</sub>As/N-InP heterostructure material was achieved to form PN junction. The diffusion mechanism of Zn in the material was studied using secondary ion mass spectrometry (SIMS) and scanning capacitance microscopy (SCM). Furthermore, the temperature-dependent photoelectric properties were investigated after the short-wave infrared (SWIR) detector was fabricated and packaged in a vacuum Dewar. The results indicate that the doped Zn elements in the material are not fully activated, leading to a PN junction depth smaller than the diffusion depth, and rapid thermal processing (RTP) does not affect the PN junction depth. The cutoff long-wavelength of the detector at 273K is 2.53 μm, and the peak detectivity reaches a peak value of 2.42×10<sup>11</sup> cm•Hz<sup>1/2</sup>/W at 133K.
Authors
- Honghai Deng (ORCID: https://orcid.org/0000-0002-3033-3370)
- L. Xue (ORCID: https://orcid.org/0000-0002-0279-417X)
- Haimei Gong (ORCID: https://orcid.org/0000-0002-0446-0157)
- Yi Li (ORCID: https://orcid.org/0000-0003-2236-895X)
- Youhua Zhu (ORCID: https://orcid.org/0000-0001-6973-4959)
- Xinglong Guo
- Zhiliang Wang
Institutions
- Nantong University (CN)
- Shanghai Institute of Technical Physics (CN)
Publication Details
- Published
- 2024-12-13
- DOI
- https://doi.org/10.1117/12.3047989
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00