MOSFET electron mobility enhancement using source/drain recess

Because of its role in circuit switching speed, the ON-state (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>) current is one of the most important parameters of MOSFET devices. Several design or technological process enhancements can increase the I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> current and one of them is to incorporate a tensile layer in the MOSFET process to constrain the channel and obtain better electron mobility. In this paper, we present how a source/drain recess can lead to a better efficiency of the tensile layer.