Producing a Bidirectional ATPG Compliant Verilog-HDL Memory Model of SRAM

Memory components are increasingly used in modern systems such as System-on-Chip (SoC). Moreover, they are becoming more complex as the technology node shrinks, which makes them more prone to manufacturing defects. A large part of memory testing is based on functional tests, using March algorithms to target Functional Fault Models (FFMs). New test methodologies are developed to anticipate the growing complexity of memory components, such as the Cell-Aware (CA) test methodology which has been recently introduced in the field of memory testing. However, in order to apply the CA methodology, which introduces a structural consideration of the circuit to be tested, an accurate digital model of the SRAM has to be designed. This paper proposes a methodology to produce a digital Verilog-HDL netlist of an SRAM, based on an initial analog model (SPICE netlist). The resulting digital model considers the bidirectional nature of the memory, and it is ATPG-compliant, allowing test patterns generation and fault simulation as well.

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Publication Details

Published
2024-10-14
DOI
https://doi.org/10.1109/dttis62212.2024.10780141
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.42

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article

Producing a Bidirectional ATPG Compliant Verilog-HDL Memory Model of SRAM

Eric Faehn, Xhesila Xhafa, T. Vayssade, P. Girard et al.
2 citations
Semiconductor materials and devices
0.42
article

Producing a Bidirectional ATPG Compliant Verilog-HDL Memory Model of SRAM

Eric Faehn, Xhesila Xhafa, T. Vayssade, P. Girard, A. Virazel, D. Ronga
article en
2 citations

Abstract

Memory components are increasingly used in modern systems such as System-on-Chip (SoC). Moreover, they are becoming more complex as the technology node shrinks, which makes them more prone to manufacturing defects. A large part of memory testing is based on functional tests, using March algorithms to target Functional Fault Models (FFMs). New test methodologies are developed to anticipate the growing complexity of memory components, such as the Cell-Aware (CA) test methodology which has been recently introduced in the field of memory testing. However, in order to apply the CA methodology, which introduces a structural consideration of the circuit to be tested, an accurate digital model of the SRAM has to be designed. This paper proposes a methodology to produce a digital Verilog-HDL netlist of an SRAM, based on an initial analog model (SPICE netlist). The resulting digital model considers the bidirectional nature of the memory, and it is ATPG-compliant, allowing test patterns generation and fault simulation as well.

Centre National de la Recherche Scientifique (FR), Université de Montpellier (FR), Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier (FR), STMicroelectronics (France) (FR)
Agence Nationale de la Recherche
Affordable and clean energy
Openalex Percentile: Top 36%
Semiconductor materials and devices
0.42
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Producing a Bidirectional ATPG Compliant Verilog-HDL Memory Model of SRAM — Eric Faehn, Xhesila Xhafa, et al. · (2024) | TGRS Research Map | TGRS