Structure for characterization of MOS transistors in 28FD-SOI technology

In this document, we present a structure for DC characterization of MOS transistors. The challenge is to accurately characterize those devices at very high and very low currents where the leakages are the most problematic. The starting point was a standard structure with a Kelvin measurement (force and sense branch) and we improved the structure little by little in order to solve the different issues faced. The proposed structure allows to measure accurately low and high currents where the initial structure tends to be inadequate. Simulation results show an error of measurement of only 0.2% at worst for high currents and test results are also in line with the simulation and with other measurements made on the wafer which proves the efficiency of the structure