Microstructure and optical properties of PbSeTe thin films prepared by magnetron sputtering

Lead selenide telluride (PbSeTe) polycrystalline films were prepared by magnetron sputtering technique using ternary target material. The lead selenide telluride films were oxidized and iodized. The film samples were tested by the Rigaku Smartlab (grazing X-ray diffractometer) in Japan. The morphology of PbSeTe films after evaporation was observed by SEM (Geminisem 300). The Raman spectra of Pb Se telluride thin films were measured by a confocal microprobe Raman spectrometer (RENISHAW in Via Raman Microscope) and a He-Ne laser with wavelength of 514.5 nm. The infrared photoelectric characteristics of the detector made of PbSeTe thin film before and after sensitization were tested and analyzed. XRD and EDS results show that the prepared PTE films are homogeneous and compact with small grains, and no particles with clear edge profiles can be observed under scanning electron microscopy. The atomic ratio of Te, Pb and Se tends to be 5:7:7. The photoelectric performance detection results show that the sensitized device has excellent photoelectric performance, the photocurrent and response speed are improved significantly, and the fastest rise time and fall time of 980 nm can reach 38.95 microseconds and 620 microseconds, respectively, and the maximum signal-to-noise ratio is nearly 100 times. Therefore, by adjusting sputtering parameters and post-processing, PbSeTe thin film detectors with good photoelectric properties can be obtained.