Design, fabrication, and measurement of 500-750 GHz silicon waveguide transitions based on gap waveguide

The design, fabrication and measurement process of silicon based waveguide transitions working from 500 GHz to 750 GHz is reported in this paper. Gap waveguide is applied to the waveguide cavity design. The electromagnetic bandgap characteristic helps to split the three dimensional structure into slices. Hence the waveguide transition could be composed of thin gold coating silicon layers. Micro-electro-mechanical system (MEMS) technology is used for the fabrication of periodic pins and multi-step transitions. A metallic clamp is designed for measurement. Measured results show that the transmission loss is better than 0.13 dB/mm and the reflection coefficient is lower than -9 dB.