High performance room temperature mid-infrared linear array utilizing semimetal ZrTe3

Mid-infrared detectors are extensively studied due to their significant applications in aerospace, non-destructive testing, and environmental monitoring. However, currently used mid-infrared detectors require low temperature working conditions, significantly limiting their development. Here, we adopt semimetal ZrTe<sub>3</sub> with zero bandgap characteristic, which enables the effective absorption of mid-infrared electromagnetic waves with low photon energy. The single point detector achieves the responsivity of 0.626 A/W with -0.2 V bias at 4.6 μm. Moreover, we fabricated the 8&times;1 ZrTe<sub>3</sub> linear array, which achieved the non-uniformity of 7.37% and the noise equivalent temperature difference of 56.9 mK. Our research provides new insights for the development of room-temperature mid-infrared detectors.

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Publication Details

Published
2024-12-13
DOI
https://doi.org/10.1117/12.3048098
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
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article

High performance room temperature mid-infrared linear array utilizing semimetal ZrTe3

Aosheng Zheng, Y.-F. Zhang, Guanchu Ding, Hang Xu et al.
Advanced Semiconductor Detectors and Materials
article

High performance room temperature mid-infrared linear array utilizing semimetal ZrTe3

Aosheng Zheng, Y.-F. Zhang, Guanchu Ding, Hang Xu, Fan Yang, Yanyan Liu, Jianquan Yao, Huanyu Ren
article en

Abstract

Mid-infrared detectors are extensively studied due to their significant applications in aerospace, non-destructive testing, and environmental monitoring. However, currently used mid-infrared detectors require low temperature working conditions, significantly limiting their development. Here, we adopt semimetal ZrTe<sub>3</sub> with zero bandgap characteristic, which enables the effective absorption of mid-infrared electromagnetic waves with low photon energy. The single point detector achieves the responsivity of 0.626 A/W with -0.2 V bias at 4.6 μm. Moreover, we fabricated the 8&times;1 ZrTe<sub>3</sub> linear array, which achieved the non-uniformity of 7.37% and the noise equivalent temperature difference of 56.9 mK. Our research provides new insights for the development of room-temperature mid-infrared detectors.

Tianjin University (CN), Xiamen University (CN), National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
Affordable and clean energy
Openalex Percentile: Top 80%
Advanced Semiconductor Detectors and Materials
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