High performance room temperature mid-infrared linear array utilizing semimetal ZrTe3
Mid-infrared detectors are extensively studied due to their significant applications in aerospace, non-destructive testing, and environmental monitoring. However, currently used mid-infrared detectors require low temperature working conditions, significantly limiting their development. Here, we adopt semimetal ZrTe<sub>3</sub> with zero bandgap characteristic, which enables the effective absorption of mid-infrared electromagnetic waves with low photon energy. The single point detector achieves the responsivity of 0.626 A/W with -0.2 V bias at 4.6 μm. Moreover, we fabricated the 8×1 ZrTe<sub>3</sub> linear array, which achieved the non-uniformity of 7.37% and the noise equivalent temperature difference of 56.9 mK. Our research provides new insights for the development of room-temperature mid-infrared detectors.
Authors
- Aosheng Zheng
- Y.-F. Zhang
- Guanchu Ding (ORCID: https://orcid.org/0000-0002-1595-4275)
- Hang Xu (ORCID: https://orcid.org/0000-0002-6784-5863)
- Fan Yang (ORCID: https://orcid.org/0000-0002-8321-4244)
- Yanyan Liu (ORCID: https://orcid.org/0000-0001-8488-5480)
- Jianquan Yao (ORCID: https://orcid.org/0000-0003-3105-4370)
- Huanyu Ren
Institutions
- Tianjin University (CN)
- Xiamen University (CN)
- National Engineering Research Center of Electromagnetic Radiation Control Materials (CN)
Publication Details
- Published
- 2024-12-13
- DOI
- https://doi.org/10.1117/12.3048098
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00