Study on the microstructure and optical properties of PbTe films prepared by magnetron sputtering

We present a Si-based Photodetector with a broadband and fast response based on Lead telluride (PbTe) polycrystalline films prepared by magnetron sputtering technique. The prepared PbTe films are polycrystalline and the dominant surface is (111) plane. The best films have triangular morphology. The atomic ratio of Pb/Te tends to 1:1. The photoelectric property detection results show that the films deposited at 130 W for 10 minutes at room temperature have excellent properties. The fastest rise time and fall time of near infrared band can reach 900 microseconds and 700 microseconds respectively, and the longest detection band can reach 4.1 microns.

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Publication Details

Published
2024-12-13
DOI
https://doi.org/10.1117/12.3047836
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
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Study on the microstructure and optical properties of PbTe films prepared by magnetron sputtering

Jun Gou, Boo Hyun An, Lixin Liu, Jiamin Jiang et al.
Advanced Semiconductor Detectors and Materials
article

Study on the microstructure and optical properties of PbTe films prepared by magnetron sputtering

Jun Gou, Boo Hyun An, Lixin Liu, Jiamin Jiang, Jun Wang
article en

Abstract

We present a Si-based Photodetector with a broadband and fast response based on Lead telluride (PbTe) polycrystalline films prepared by magnetron sputtering technique. The prepared PbTe films are polycrystalline and the dominant surface is (111) plane. The best films have triangular morphology. The atomic ratio of Pb/Te tends to 1:1. The photoelectric property detection results show that the films deposited at 130 W for 10 minutes at room temperature have excellent properties. The fastest rise time and fall time of near infrared band can reach 900 microseconds and 700 microseconds respectively, and the longest detection band can reach 4.1 microns.

University of Electronic Science and Technology of China (CN)
Openalex Percentile: Top 80%
Advanced Semiconductor Detectors and Materials
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