Study of optoelectronic synaptic devices and image memory based on BaSrTiO3 (BST) thin film

Nowadays, the Von Neumann computing structure, which separates storage and computation, limits the rate of data processing. There is an urgent need to design chips with integrated storage and computation functions to avoid the problem of data transportation fundamentally and reduce the time needed for transmission. Inspired by the integration of neurons and synapses in the human brain with storage and computation, people began to study brain-like chips. Synapse simulation is the key to the manufacture of brain-like chips, in which photoelectric synapses have the advantages of low crosstalk, large bandwidth, low latency and low power consumption, but also simulate human vision, which has become a hot spot of synapse research. In this thesis, photoelectrical synaptic devices with the structures of ITO/BST:Ag/SiO₂/P-Si/ITO were fabricated by magnetron sputtering method. The synaptic performance and the working principle of the device was investigated. Finally, this article randomly selects 25 ITO/BST: Ag/SiO₂/P-Si/ITO synaptic devices to form a 5 × 5 array, ensuring that each unit device is isolated from each other and the current is not affected. Use light pulses with different parameters to excite each unit device, record the current value of the device, simulating the image memory function of the human eye.