Design and performance analysis of strain-compensated quantum wells for 1654nm VCSELs
This paper presents a comprehensive study on the properties of strain-compensated In<sub>1-x-y</sub>Ga<sub>x</sub>Al<sub>y</sub>As/In<sub>1-x-y</sub>Ga<sub>x</sub>Al<sub>y</sub>As quantum wells matched in InP substrate for 1654nm VCSELs. The physical properties of In<sub>1-x-y</sub>Ga<sub>x</sub>Al<sub>y</sub>As/In<sub>1-x-y</sub>Ga<sub>x</sub>Al<sub>y</sub>As quantum wells are studied. We executed an in-depth study concerning the gain characteristics of different quantum well structures for 1654nm VCSELs, then candidate quantum well combinations are obtained. In addition, the gain-carrier properties of the selected quantum wells are also studied. The results show that the quantum well structure, In<sub>0.749</sub>Ga<sub>0.205</sub>Al<sub>0.046</sub>As/In<sub>0.42</sub>Ga<sub>0.43</sub>Al<sub>0.15</sub>As quantum well of 6nm, is more suitable for 1654nm VCSELs due to its properties: larger band-gap offset, higher material gain, low transparency carrier density and higher differential gain. The VCSELs with it would have better photoelectric properties. This study provides valuable insights for optimizing active region of VCSELs suitable for 1654nm methane detection and improving device performance.
Authors
- Jian Qiang Feng (ORCID: https://orcid.org/0000-0002-7774-4724)
- Wanxian Xu
- Jun Xie (ORCID: https://orcid.org/0000-0003-0486-0844)
- Huijun Li (ORCID: https://orcid.org/0000-0002-2896-3867)
Institutions
- Shenzhen Technology University (CN)
Publication Details
- Published
- 2024-12-13
- DOI
- https://doi.org/10.1117/12.3047650
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00