Research on pixel SNR of low light image sensor

The Low-light image sensor is the photoelectric detector for imaging in the environment of full month illumination and lower illumination. The main detector types include the electrical gain detector represented by EMCCD, the optical gain detector represented by MCP detector, and the latest scientific CMOS image sensor (sCMOS). EMCCD uses high voltage electric field to multiply electrons after photoelectric conversion, so as to improve photoelectric conversion sensitivity. MCP uses high voltage electric field to multiply electrons converted by photo-cathode materials, which improves the photon flux of dim targets, and thus improves the sensitivity of detector to dim targets in low light environment. Scientific CMOS image sensor is proposed in recent years that does not rely on external structure, and obtains high sensitivity by optimizing CMOS pixel technology, pixel structure and readout circuit noise level. Based on the optical and electrical parameters of the these kinds of low light level detectors, this paper analyzes the calculation methods of SNR of the these kinds of low light level detectors in detail, and expounds the theoretical characteristics and application fields of the these kinds of low light level detectors.