The investigation of main electrical parameters, energy dependent profiles of surface states and their lifetimes in the Au/n-Si Schottky diodes with (PVA-Fe₃O₄) interlayer depend on frequency and voltage

Abstract In this article, the impedance-voltage-frequency (Z-V-f) measurements of the fabricated Au/(PVA-Fe 3 O 4 )/n-Si SDs have been performed between 0.1 kHz and 1 MHz, and in the ±3 V range. Main important electronic parameters of the Schottky diode (SD) like diffusion - potential (V D ), Fermi - energy (E F ), barrier - height (Φ B ), depletion layer (W D ), and max. electric field (E m ) were extracted from the reverse bias 1/C 2 - V plots in a wide frequency range. The voltage-reliant variations of the surface states (N ss ) have been calculated by using low—high frequency capacitance (C LF -C HF ), and parallel conductance or admittance models and compared to each other. The voltage-reliant resistance profile of R i has also been obtained from the Nicollian & Brews method for all frequencies. All these results indicate that these main electrical parameters are strongly dependent on voltage and frequency due to the existence of N ss , their lifetimes ( τ ), interfacial organic layer, R s , interface, and dipole polarizations. But, while N ss is effective, both in depletion and inversion regions, R s is dominant at the strong-accumulation region at high enough frequency.