Improvement of Antistatic Discharge Performance of 1.3-μm AlGaInAs/InP Semiconductor Lasers
Electrostatic discharge (ESD) failure is a reliability concern for InP-based semiconductor lasers. An analysis of ESD-induced failures in AlGaInAs/InP-based DFB semiconductor lasers reveals that the primary degradation mechanism is optical absorption in the active layer at the laser facet. XPS results demonstrate that device failures caused by ESD can be effectively mitigated through surface cleaning and passivation, with this effect attributed to a reduction in non-radiative recombination at the facet.
Authors
- Mingjun Dai (ORCID: https://orcid.org/0009-0007-6823-4953)
- Yunlong Du
- Hui Lv (ORCID: https://orcid.org/0000-0003-3226-0926)
- Chao Niu (ORCID: https://orcid.org/0009-0001-6213-7657)
Institutions
- Wuhan Municipal Engineering Design & Research Institute (CN)
- Hubei University of Technology (CN)
Publication Details
- Journal
- IEEE Photonics Technology Letters
- Published
- 2024-12-13
- DOI
- https://doi.org/10.1109/lpt.2024.3517423
- Citations
- 1
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- National Key Research and Development Program of China