SMS: Solving Many-sided RowHammer
Dynamic Random-Access Memory forms the backbone of modern memory systems.However, a critical security vulnerability known as RowHammer threatens the integrity of this cornerstone technology.As DRAM advancements progress, the RowHammer problem worsens due to a concerning trend: the threshold for triggering a bit flip is steadily decreasing.While numerous solutions have been proposed to mitigate RowHammer over the past decade, however these solutions primarily excel at addressing traditional RowHammer scenarios.More complex variations, such as many-sided RowHammer can circumvent existing defenses and compromise the security of main memory.To address this gap, we propose SMS, a solution specifically designed to tackle many-sided RowHammer while also mitigating classic RowHammer.Our model demonstrates notable performance and energy efficiency, with only 3.22% performance overhead and 8.83% DRAM energy overhead, as evidenced by our evaluation on the Spec2017, PARSEC, and LIGRA benchmark suites.In contrast, the current state-of-the-art solution (Hydra+AQUA) incurs a much higher slowdown of 15.61% and a DRAM energy overhead of 32.36%.
Authors
- Samiksha Verma
- Virendra Singh (ORCID: https://orcid.org/0000-0002-7035-7844)
Institutions
- Indian Institute of Technology Bombay (IN)
Publication Details
- Journal
- Proceedings of the International Symposium on Memory Systems
- Published
- 2024-09-30
- DOI
- https://doi.org/10.1145/3695794.3695802
- Citations
- 1
- Primary Topic
- Opportunistic and Delay-Tolerant Networks
- Type
- article
- Field-Weighted Citation Impact
- 0.35