Forming‐Free ZnO‐Based Resistive Random Access Memory with Supercritical Fluid Hydrogenation Technique

Herein, the supercritical hydrogen treatment is proposed to improve the performance of zinc oxide‐based resistive random access memory. After treatment, the treated device not only achieves the forming‐free characteristic but also gets enhanced in its memory window, reset voltage, and reliability. Moreover, X‐Ray photoelectron spectroscopy analysis confirms the forming‐free characteristic of the treated device since the treatment decreases the concentration of ZnO bonding in the zinc oxide thin film, leading the conductive filament to be constructed in the zinc oxide switching layer. Next, the carrier transport mechanism is investigated by fitting current–voltage curves. Finally, the physical models based on the electrical properties and the material analyses are introduced to illustrate the oxygen ions and hydroxide ions that create the forming‐free characteristic and better memory characteristics in the random access memory device after the supercritical fluid treatment. Hence, this method demonstrates the promising practical and effective utilization of enhancing memory devices, in the future.