Photoinduced Reconfigurable Binary‐Synaptic Transistor for in‐Memory and Logic Operations

Abstract Reconfigurable field‐effect transistors (RFETs) are a cutting‐edge research area that can significantly impact future advancements in electronics and computing. While various RFETs with diverse functionalities are actively reported in recent studies, further research efforts are imperative to explore RFETs with broader capabilities. Herein, a photoinduced reconfigurable transistor (PIRT) that alters its transport characteristics is presented in response to visible light using titanium dioxide nanoparticles encapsulated by an amphiphilic polymer (TiAP)/indium–gallium–zinc‐oxide heterojunction. The photo‐generated electrons and holes resulting from the photoionization of oxygen vacancies within the TiAP layer facilitate reversible switching between binary transistor and synaptic transistor modes. Utilizing these features, reconfigurable logic gates that function as both a digital NOT gate and a synaptic comparator depending on light exposure are developed. Additionally, a PIRT‐based in‐memory computing array is developed to perform multiply–accumulate operations, thus highlighting its potential for efficient, high‐density computing applications.