Vertical conductivity and atomic-level reconstruction in small-angle twisted MoS₂ homostructures

Twisted interface structure of two-dimensional materials offers nearly limitless platforms for the design of novel metamaterials. The natures of these twisted systems depend strongly on the twisted angle between adjacent layers. Due to the intriguing optical and electronic properties observed in twisted graphene and transition metal dichalcogenides, this field has attracted increased attention. Here, we employ conductive atomic force microscopy (CAFM) to investigate the vertical conductivity of small twisted bilayer MoS₂ (ST-MoS₂). We find that different atomic configurations exhibit distinct vertical conductivities, and it exhibits uniform conductivity within the domains, providing insights into the design and optimization of its optical and electronic natures.