Polarization-driven edge state transition in MoS2/WS2 lateral heteroribbon
Two-dimensional monolayer transition metal dichalcogenides have attracted a lot of attention owing to their excellent physical properties. The significant polarization field induced by external strain within two-dimensional piezoelectric semiconductor materials can effectively regulate the properties of the materials. In this article, the edge-state of MoS<sub>2</sub>/WS<sub>2</sub> lateral heteroribbon has been theoretically investigated by three-orbital tight-binding model. And the piezotronic effect on the edge state is also studied. The external in-plane stress can induce a metallic-to-semiconducting phase transition. This study offers an effective way to module the electric properties of lateral heterostructure.
Authors
- Nian Liu (ORCID: https://orcid.org/0000-0002-5966-0244)
- Yan Zhang (ORCID: https://orcid.org/0000-0001-9235-6861)
- Changming Xie (ORCID: https://orcid.org/0000-0002-9311-866X)
Institutions
- University of Electronic Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Published
- 2024-12-12
- DOI
- https://doi.org/10.1117/12.3052611
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00