Research of an invisible light-emitting diode chip which can improve the luminescence rate

The article presents the industrialization status of AlGaAs Light Emitting Diode (AlGaAs-LED) Thin-Film Reflect substrate (RS) series of chip products. By adopting many advanced technologies and quality control techniques, the epitaxial slices and chips of Infrared RS-LED produced by industrialization have good performance and reliability. In epitaxial layer with MQW InGaAs, increasing opposed stress between the barrier layer AlGaAsP and MQW InGaAs to restrain the defect producing in active layer to improve the light efficiency. The Infrared RS-LED chips have the high-current and current spreading characteristics by using key processing technologies including Low-temperature Ag Omni directional reflector (ODR), substrate transfer, Low-melting metallic bonding, and lead to a large rise in brightness. Based on the characteristics of production technique, the article has analyzed the key process, the quality control point and key parameter in industrialization process, proposed the effective produced process quality control method and put it into practice.