Silica Waveguide Thermo-Optic Mode Switch with Bimodal S-Bend

A silica waveguide thermo-optic mode switch with small radius bimodal S-bends is demonstrated in this study. The cascaded multimode interference coupler is adopted to implement the E<sub>11</sub> and E<sub>21</sub> mode selective output. The beam propagation method is used in design optimization. Standard CMOS processing of ultraviolet photolithography, chemical vapor deposition, and plasma etching are adopted in fabrication. Detailed characterizations on the prepared switch are performed to confirm the precise fabrication. The measurement results show that within the wavelength range from 1530 to 1575 nm, for the E<sub>11</sub> mode input, the switch exhibits an extinction ratio of ≥13.1 dB and a crosstalk ≤-22.8 dB at an electrical driving power of 284.8 mW, while for the E<sub>21</sub> mode input, the extinction ratio is ≥15.5 dB and the crosstalk is ≤-18.1 dB at an electrical driving power of 282.4 mW. These results prove the feasibility of multimode S-bends in mode switching. The favorable performance of the demonstrated switch promises good potential for on-chip mode routing.

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Publication Details

Journal
Nanomaterials
Published
2024-12-12
DOI
https://doi.org/10.3390/nano14241991
Citations
1
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21

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article

Silica Waveguide Thermo-Optic Mode Switch with Bimodal S-Bend

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article

Silica Waveguide Thermo-Optic Mode Switch with Bimodal S-Bend

Manzhuo Wang, Daming Zhang, Xiaoqiang Sun, Yue Zhang, Yuanda Wu, Zhaoyang Sun, Zhentao Yao
article en
1 citations

Abstract

A silica waveguide thermo-optic mode switch with small radius bimodal S-bends is demonstrated in this study. The cascaded multimode interference coupler is adopted to implement the E<sub>11</sub> and E<sub>21</sub> mode selective output. The beam propagation method is used in design optimization. Standard CMOS processing of ultraviolet photolithography, chemical vapor deposition, and plasma etching are adopted in fabrication. Detailed characterizations on the prepared switch are performed to confirm the precise fabrication. The measurement results show that within the wavelength range from 1530 to 1575 nm, for the E<sub>11</sub> mode input, the switch exhibits an extinction ratio of ≥13.1 dB and a crosstalk ≤-22.8 dB at an electrical driving power of 284.8 mW, while for the E<sub>21</sub> mode input, the extinction ratio is ≥15.5 dB and the crosstalk is ≤-18.1 dB at an electrical driving power of 282.4 mW. These results prove the feasibility of multimode S-bends in mode switching. The favorable performance of the demonstrated switch promises good potential for on-chip mode routing.

NanomaterialsVol. 14(24)
Jilin University (CN), Chinese Academy of Sciences (CN), State Key Laboratory on Integrated Optoelectronics (CN), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN)
National Key Research and Development Program of China
Openalex Percentile: Top 45%
Photonic and Optical Devices
0.21
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