Enhancing optoelectronic and communication performance of green μ-LEDs using pre-strain layer structures
An efficient pre-strained layer structure is proposed, which combines a pre-layer with a pre-well, to prepare a 2 × 3 InGaN green micro-light-emitting-diode (μ-LED) device array with a diameter of 20 μm. The addition of the pre-layer increases the lateral lattice constant of the bottom layer of the structure. This alleviates the strain accumulation of lattice mismatch, reduces the quantum-confined Stark effect (QCSE) of the green μ-LEDs, improves the crystal quality, and produces better optoelectronic properties. Under stress modulation, the external quantum efficiency and -3 dB modulation of the green μ-LED array reach 16.6% and 411 MHz, respectively, which are 14.8 and 91.2% higher than those of the traditional structure.
Authors
- Tingwei Lu (ORCID: https://orcid.org/0000-0003-4445-4648)
- Chaohsu Lai (ORCID: https://orcid.org/0009-0000-6447-1440)
- Hao‐Chung Kuo (ORCID: https://orcid.org/0000-0002-9373-4649)
- T. Lee
- Tingzhu Wu (ORCID: https://orcid.org/0000-0001-9453-6823)
- Shouqiang Lai (ORCID: https://orcid.org/0000-0002-2563-9885)
- Zhong Chen (ORCID: https://orcid.org/0000-0002-1473-2224)
- Shuhui Wang (ORCID: https://orcid.org/0000-0003-2406-5274)
- Youqin Lin
- Xinqin Liao (ORCID: https://orcid.org/0000-0001-7772-3280)
- Yurong Dai (ORCID: https://orcid.org/0009-0003-8867-6573)
- Minhao Zhao
Institutions
- Xiamen University (CN)
- Interdisciplinary Earth Data Alliance (US)
- Robotic Technology (United States) (US)
Publication Details
- Journal
- Optics Letters
- Published
- 2024-12-12
- DOI
- https://doi.org/10.1364/ol.548046
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities