Preparation and electrical properties of tetrahedrite by hot pressing sintering

This research employed hot pressing sintering technology to explore the impact of varying sintering temperatures on the synthesis and electrical characteristics of tetrahedrite, under preparation conditions spanning 400 to 550°C. The phase composition and microstructure of the tetrahedrite were ascertained through X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. The findings revealed that within the sintering temperature range of 450 to 500°C, the synthesized samples displayed a uniform phase structure comprising Cu₁₂Sb₄S₁₃ and Cu₁₄Sb₄S₁₃. Through the measurement of the Seebeck coefficient and resistivity, the trend in the electrical properties of the samples was delineated. Notably, at a sintering temperature of 500°C, the sample achieved a peak power factor of 104.07μW·(m·K²)^-1.