Voltage controls spin reorientation transition in TmFeO3 thin films

We present a study on the voltage control of the spin reorientation transition in TmFeO₃ thin films grown on PMN-PT ferroelectric substrates. Notably, we demonstrate the ability to manipulate the temperature range of this transition using an applied voltage. As the voltage increases, there is a gradual expansion of the temperature range associated with spin reorientation transition. The observed changes could be attributed to the strain-induced modifications in ion coupling strength within the TmFeO₃ thin film. These significant findings lay a solid foundation and offer a promising prospect for designing spintronic devices.