Preparation of ZnO nanorod arrays and their application in PbS quantum dot solar cells

To optimize solar energy utilization and enhance the photoelectric conversion efficiency (PCE) of PbS quantum dot solar cells, this paper uses ZnO nanorod arrays to construct the electron transport mechanism of the cells and enhance the charge transport between the device interfaces, thereby improving the photoelectric conversion efficiency. This paper systematically analyzes the influence of annealing temperatures on the ZnO nanorod array surface morphology and the photovoltaic properties of the battery devices. The results show that after introducing ZnO nanorod arrays into cells, the open-circuit voltage, short-circuit current density and fill factor rise from 0.58V to 0.64V, from 10.59mA·cm^-2 to 11.02mA·cm^-2 and from 53.1% to 55.2%, respectively. The results of impedance spectroscopy analysis show that the introduction of ZnO nanorod arrays provides a directed charge transport path, which reduces the charge transport resistance from 756.1Ω to 538.4Ω, improves the efficiency of electron transport, and elevates the photoelectric conversion efficiency from 3.26% (in the array-free structure) to 3.89%.