Research on influencing factors of surface morphology of InxGa1-xAs thin film on Si substrate

The epitaxial growth of In_xGa_1-xAs thin films at different atomic incidence angles and In-Ga atomic proportions was simulated by molecular dynamics (MD) method. The surface morphology, surface roughness and atomic distribution of In_xGa_1-xAs thin films deposited at different atomic deposition angles and In-Ga atomic proportions were analyzed. The results show that reducing the incidence angle of atoms and maintaining the In atomic proportions at 0.75 are beneficial to reduce the surface roughness and make the atomic arrangement in the thin films more orderly, thus improving the surface quality of In_xGa_1-xAs thin films.