InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%
Abstract We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a fully coalesced epitaxial lateral overgrown film from a c -plane GaN substrate. We achieve a high aspect ratio, and low defect density wing region covering 75%–88% of the substrates’ surface, which is amongst the largest reported areas in the literature. The devices at the wing region exhibit a threshold current density of 3.63 kA cm −2 at 408 nm, and an improved laser performance compared to the high defect density region is confirmed. Based on this work, it is promising that high performance, cost-efficient c -plane InGaN/GaN EELDs can be realized.
Authors
- Nathan Palmquist (ORCID: https://orcid.org/0000-0001-5413-1645)
- Hsun–Ming Chang (ORCID: https://orcid.org/0000-0001-9341-7208)
- Alejandro Quevedo (ORCID: https://orcid.org/0009-0002-8296-7524)
- Matthew S. Wong (ORCID: https://orcid.org/0000-0001-6098-7044)
- Shuji Nakamura (ORCID: https://orcid.org/0000-0001-6334-2428)
- Emily Trageser
- Steven P. DenBaars (ORCID: https://orcid.org/0000-0002-6612-5258)
- Vincent Rienzi (ORCID: https://orcid.org/0000-0001-5768-822X)
- Srinivas Gandrothula (ORCID: https://orcid.org/0000-0002-1572-0057)
- Jiaao Zhang (ORCID: https://orcid.org/0000-0002-7207-8515)
- Stephen Gee (ORCID: https://orcid.org/0000-0002-2082-5929)
- Tanay Tak (ORCID: https://orcid.org/0000-0002-6982-5938)
- Xianqing Li
Institutions
- University of California, Santa Barbara (US)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2024-12-12
- DOI
- https://doi.org/10.35848/1347-4065/ad9e5d
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- Solid State Lighting and Energy Electronics Center, University of California Santa Barbara