A Novel Trench IGBT with Built-in Temperature Sensing

An innovative trench insulated gate bipolar transistor (IGBT) with temperature sensing is proposed for effective on-line monitoring of the junction temperature. The temperature sensing is consisted by the P doped polysilicon region where the sense and ground terminals are separated on the two sides of it, sensor controlling gate and the oxide isolation part. It is easy fabricated with the conventional trench IGBT. Investigated by the technology computer-aided design (TCAD) tools, the sensing signal keeps a brilliant linear relationship with the maximum junction temperature. And the temperature difference between the sensing part and the hotspot is extremely low due to the built-in sensing structure. It has also been verified that the IGBT featuring novel temperature sensing could detect junction temperature change during the short circuit test. Besides that, as the sensing mode has been well developed, the power dissipation of the proposed temperature sensing structure is optimized. That provides a convenient use in the real power systems, which could be regarded as a superior method to monitor system temperature status.