Layout Design and Fabrication a 386% Improved SOA 100V SGT MOSFET for Linear Mode Application

Advanced gate shielded trench (SGT) power MOSFET has a narrow pitch and short channel resulting in poor linear mode performance. In order to solve this problem, wide SOA cell is proposed to integrated into the advanced SGT MOSFETs for improving its linear mode capability. The fabricated l00V SGT MOSFET has a specific on-resistance Rsp of 28 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{m}\Omega-\text{mm}^{2}$</tex>. In TO-220 package, HYG0l8Nl0NSlP has Rdson(l0V) of 2.2 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{m}\Omega$</tex>, and BVdss of l08V. Its SOA has been improved 386% from 2.8A to l0.8A at the test condition of Vgs=l0V, Vds=48V, PT=10mSec, Im=l0mA, after the integration of wide SOA cells into the original device structure. There is no increase in Idss and Igss leakage with the wide SOA cell integration. The new fabrication process is compatible to the traditional SGT MOSFET process flow. This approach can be applied to SGT and trench MOSFETs for its SOA improvement in any range of breakdown voltage.