Investigation of Buffer Profile Influence on Short-Circuit Behaviour of MPT-FS IGBT

The differences in short-circuit characteristics of MPT-FS IGBT devices with various profile of backside buffer layers formed by proton implant and low temperature anneal are compared, the mechanism of short-circuit turn-off failure of the device is analyzed, and it is verified that the short-circuit oscillation phenomenon occurs in the MPT-FS IGBT devices with relatively low bipolar current gain of the collector-side p-n-p transistor, and that, for a specific FS buffer layer, the short-circuit duration of the MPT-FS IGBT device can be improved by increasing the back-side p-collector dose.