Optimizing Analysis of $1.55\mu \mathrm{m}$ InGaAsP/InP Distributed Feedback Laser

In order to optimize the high-speed electro-absorption modulated lasers for applications in the fiber optic communication and the data center systems, the epitaxial structure of the distributed feedback (DFB) laser with the InGaAsP/InP material was designed. In this article, PICS3D software was utilized to simulate the output power and the side-mode suppression ratio (SMSR) of the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.55\mu \mathrm{m}$</tex> DFB laser under various parameters, including the quantum well thickness, the quantum well barrier thickness, the number of quantum wells, and cavity length. The simulation results show that when the number of quantum wells is 8, the quantum well thickness is 6nm, and the quantum barrier thickness is 10nm, with the injection current of 100mA, the threshold current is 13mA, the output power is 32.5mW, and the side-mode suppression ratio is 46.7dB. Subsequently, the output power and the side-mode suppression ratio of the DFB laser are found to reach the optimal values under these conditions.