A Low Switching Loss 4H-SiC Superjunction MOSFET Design

In this paper, a 4H-SiC dual-trench metal-oxide-semiconductor field effect transistor with shielded-gate and superjunction (DT/SJ-SGTMOS) is proposed. Due to the shielded gate structure at the gate trench, the gate-drain overlap area of the device is reduced. The switching speed of the device is improved. In addition, the P-pillar and the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{N}^{+}$</tex>-drift form a superjunction structure, which reduces the specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(R_{\text{on},\text{sp}})$</tex> and improves the breakdown voltage (BV). Compared with 4H-SiC superjunction dual-trench MOSFET (DT-SJMOS), the DT/SJ-SGTMOS has higher BV, faster switching speed, and superior dynamic and static performance.