Study on Breakdown Mechanism and Dynamic Avalanche of SGT MOSFET with Trench Termination
The termination structure of SGT MOSFET is related to the breakdown voltage and avalanche ruggedness. The trench termination is introduced into SGT MOSFET, and the breakdown mechanism and dynamic avalanche are studied and analyzed in this paper, which can optimize the distribution of electric field strength at the termination region, improve the voltage withstand stability and avalanche ruggedness of SGT MOSFET.
Authors
- J. L. Zhang (ORCID: https://orcid.org/0000-0002-0997-1247)
- Jing An (ORCID: https://orcid.org/0000-0003-1855-9761)
- Cailin Wang (ORCID: https://orcid.org/0000-0001-7708-5362)
- Jiaxuan He (ORCID: https://orcid.org/0000-0002-8008-2354)
Institutions
- Xi'an University of Technology (CN)
Publication Details
- Published
- 2024-08-23
- DOI
- https://doi.org/10.1109/isset62871.2024.10779720
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00