Detection of on-State Impedance Based on High-Frequency Current Injection Method
SiC (Silicon Carbide) MOSFETs are replacing Si IGBTs in the future for its advantages of high power, high frequency and high efficiency. Although the reliability of SiC MOSFET remains an important issue. In all electrical parameters, the on-resistance will indicates directly the wealth of MOSFET, including aging, junction temperature and packing failure. Online monitoring of devices on resistance is becoming increasingly important. In this paper, a method for detecting on-state impedance based on high frequency current injection is proposed. In a certain frequency range, the real part of the on-resistance is equal to the on-state resistance, and the virtual part is a constant value, which can reflect the same information as the on-resistance. The experimental results show that the measurement error is less than 10%.
Authors
- Lingqi Tan
- Jiabin Huang (ORCID: https://orcid.org/0000-0002-3480-7115)
- Kai Ma (ORCID: https://orcid.org/0000-0003-3517-5620)
- Kuang Sheng (ORCID: https://orcid.org/0000-0001-8839-7281)
- Junze Li (ORCID: https://orcid.org/0009-0000-0426-313X)
- Junming Zhang (ORCID: https://orcid.org/0000-0002-4272-3237)
- Ying Li (ORCID: https://orcid.org/0000-0001-8701-1164)
- Qing Guo (ORCID: https://orcid.org/0000-0002-5417-8846)
Institutions
- China Southern Power Grid (China) (CN)
- Zhejiang University (CN)
Publication Details
- Published
- 2024-08-23
- DOI
- https://doi.org/10.1109/isset62871.2024.10779790
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00