Characteristic Analysis of 200V 4H-SiC RESURF LDMOS

The characteristics of 200V 4H-SiC RESURF LDMOS is analyzed by simulation in this paper. The RESURF principle is adopted to shift the high field intensity of from the lateral pn- junction near the surface to the vertical p-n- junction in the body, so that the breakdown point is shifted from the surface to the bulk to increase the breakdown voltage. By optimizing the doping concentration and thickness of the n- drift region to make the surface electric field distribution uniform, can obtain the better trade-off between breakdown voltage and on-resistance.