Comparative Study on the Normal Avalanche Breakdown and Delayed Avalanche Breakdown for 10kV 4H-SiC FID

In this paper, the comparative study between the normal avalanche breakdown and delayed avalanche breakdown for lOkV 4H-SiC Fast Ionization Device is experimented by numerical simulation methods. A 4H-SiC traditional asymmetric thyristor with the forward blocking voltage of lOkV, the static breakdown and the pulse triggering circuits are adapted. The distribution of electric field, the carrier's density and impact ionization rate between NAB and DAB are compared by the simulator. The results show that the differences between them are uniformity of the electric field distribution, background carriers' density and the rate of impact ionization. This may be attributed to the variation of effective charge density in the base region.