Reliability Research of Gallium Oxide MOSFET Power Devices

This research focuses on the reliability of gallium oxide MOSFET power devices. With the rapid development of power electronics technology, gallium oxide has become a research hotspot in the field of power devices due to its excellent material properties. However, its reliability issue has become a key challenge in practical applications. Through in-depth experimental analysis and theoretical research, we systematically investigated the performance changes of gallium oxide MOSFET under different working conditions, including the influence of factors such as temperature and voltage stress on the reliability of the device. This paper focuses on the reliability of gallium oxide MOSFET power devices. Combined with relevant references at home and abroad, by studying its thermal conductivity and P-type doping and epitaxy issues, the key factors affecting the reliability of the device are revealed, and corresponding improvement measures and optimization schemes are proposed.