Optimization Design and Simulation of 1.2kV SiC Optically Controlled Transistor for Power Switch

An optimized design of a 1.2 kV SiC NPN optically controlled transistor was developed. By using the Sentaurus TCAD tool, the doping concentration and thickness of the p-base region, as well as the ratio of light window width to electrode width, were systematically designed and optimized to achieve an optimal trade-off between breakdown voltage and current gain. When the base region thickness is O.2μm, the concentration is 7x10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm-3, and the ratio of light window width to electrode width is 19, the resulting breakdown voltage is 1476V, the current gain is 249.74AIW, and the transition frequency is 10MHz. These results indicate that the SiC NPN optically controlled transistor optimized using this method is suitable for high-voltage, high-frequency, and high-power applications.