Research on Mechanism and ESD Protection Characteristics of a Novel DP_DDSCR with Low Trigger Voltage

In this paper., a novel bidirectional electrostatic discharge (ESD) protection device., called DP _DDSCR (Direction Silicon-Controlled Rectifier with embedded lateral PNP transistors) presented as a solution to rectify the high trigger voltage issue found in conventional DDSCR (Direction Silicon-Controlled Rectifier) The proposed DP _DDSCR structure is an improvement upon the traditional DDSCR., embedding two symmetrical P+ region. The current transport mechanism of the new device is analyzed., with particular attention given to the improvement mechanism of electrostatic protection characteristics due to the introduction of symmetrical P+ regions. The embedded P+ regions and N -well in the new structure create a parasitic PNP transistor that forms an auxiliary trigger path., improving upon the high trigger voltage issue found in traditional DDSCR devices., which rely on the avalanche effect of the reverse-biased PN junction between wells. The parasitic PNP transistor acts as a current discharge path., working with the main SCR to discharge current after the device is triggered., which improves the efficiency of current discharge. The static electrical characteristics and transient performance of the new DP _DDSCR device structure are analyzed based on TLP (Transmission Line Pulsing) and VF-TLP (Very-Fast TLP) test and simulation methods. The testing result show that., compared to traditional DDSCR., the trigger voltage of DP _DDSCR decreases by 44.9%., and the ESD design window is optimized by 50.4%. Furthermore., the new structure demonstrates a significant decrease in overshoot voltage., along with superior heat dissipation capability and turn-on speed.