Reliability Test in Severe Environments of 1700 V Discrete SiC MOSFET

SiC MOSFET., as a representative of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$S$</tex>i<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$C$</tex>devices., has been widely used due to its advantages such as high switching speed and low switching losses. The long-term operational reliability of SiC MOSFET is currently a hot topic of research. This paper tests the static and dynamic characteristics of a batch of discrete 1700 V., 45 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{m}\Omega$</tex> SiC MOSFETs and subjects them to a series of laboratory simulations of harsh environmental conditions., verifying their reliability under severe environments.