Multi-Variable Analysis of Current Carrying Characteristics and Solder Joint Thermal Stress in TSV Structures of Integrated Circuits

As ICs advance toward smaller dimensions and higher power densities, the current carrying characteristics of TSVs within ICs significantly impact their thermal behavior during operation. The thermal stresses lead to mechanical fatigue of the TSVs, degrading the performance and lifetime of the ICs. This paper focuses on the modeling of TSVs for integrated circuits, constructing an electro-thermo-mechanical multi-physics coupled model. Finite element simulations are employed to analyze the impact of TSV radius, height, quantity, and current on current carrying characteristics. Based on these analyses, the thermal stress induced by Joule heating is further investigated. The results demonstrate that TSV radius exerts the most significant influence on current carrying characteristics, with a unit change reaching 262.82%, followed by current density, which exhibits a unit change of 92.85%. Regarding thermal stress, TSV radius demonstrated the most substantial impact, with a unit change of 119.17%, while current density displayed the second most significant influence, with a unit change of 77.95<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">%</sup>. TSV quantity and height showed unit changes of 56.55% and 55.32% respectively. The combination of smaller radius and higher currents accelerates thermal aging in TSVs, increasing the likelihood of structural failure and resulting in diminished performance and reduced lifespan for the ICs.