Effect of Incident Energy on Deposition of Ge_0.2Si_0.8 Films on Ge Substrate: A Molecular Dynamics Study

Due to its excellent electronic and optical properties, Ge/GeSi substrates have significant potential for application in the development of integrated circuits and optoelectronic devices. This article uses molecular dynamics simulation to study the effect of incident energy on the surface morphology, lattice structure, and dislocation distribution of Geo.2Sio.8 thin films deposited on Ge substrates. Research has found that incident energy can improve the surface smoothness of thin films and reduce their surface roughness. The increase in incident energy can also lead to intensified mixing at the interface between the substrate and the thin film. At the same time, the increase in energy can also reduce the proportion of amorphous in the film, reduce the formation of dislocations and other defects, and improve the overall quality of the film. However, excessive incident energy can cause deposited atoms to penetrate the substrate, disrupting its internal stability.