Study on Thermal Resistance Performance of Press-Pack IGBT Modules

As an emerging power electronic device, Press-Pack IGBTs (PP-IGBT) are widely used in high-voltage DC transmission applications, but the thermal resistance modeling and parameter analysis of such devices are still unclear. This paper takes the 4500V/800A PP-IGBT module produced by SIMO as an example, disassembles and measures the module, establishes an Ansys analysis model, for the finite element method analysis of the influence of each surface heat dissipation on the thermal resistance results and temperature distribution of the module. Based on the simulation results, and experimental verification is conducted.

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Publication Details

Published
2024-08-23
DOI
https://doi.org/10.1109/isset62871.2024.10779907
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.21
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Study on Thermal Resistance Performance of Press-Pack IGBT Modules

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1 citations
Silicon Carbide Semiconductor Technologies
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article

Study on Thermal Resistance Performance of Press-Pack IGBT Modules

Lingqi Tan, Qi Guo, Yue Quan, Junming Zhang, Ying Li, Yangyi Shen, Hai Lin, Kai Ma
article en
1 citations

Abstract

As an emerging power electronic device, Press-Pack IGBTs (PP-IGBT) are widely used in high-voltage DC transmission applications, but the thermal resistance modeling and parameter analysis of such devices are still unclear. This paper takes the 4500V/800A PP-IGBT module produced by SIMO as an example, disassembles and measures the module, establishes an Ansys analysis model, for the finite element method analysis of the influence of each surface heat dissipation on the thermal resistance results and temperature distribution of the module. Based on the simulation results, and experimental verification is conducted.

China Southern Power Grid (China) (CN), Zhejiang University (CN)
Affordable and clean energy
Openalex Percentile: Top 45%
Silicon Carbide Semiconductor Technologies
0.21
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