Study on Thermal Resistance Performance of Press-Pack IGBT Modules
As an emerging power electronic device, Press-Pack IGBTs (PP-IGBT) are widely used in high-voltage DC transmission applications, but the thermal resistance modeling and parameter analysis of such devices are still unclear. This paper takes the 4500V/800A PP-IGBT module produced by SIMO as an example, disassembles and measures the module, establishes an Ansys analysis model, for the finite element method analysis of the influence of each surface heat dissipation on the thermal resistance results and temperature distribution of the module. Based on the simulation results, and experimental verification is conducted.
Authors
- Lingqi Tan
- Qi Guo (ORCID: https://orcid.org/0000-0003-2453-4018)
- Yue Quan (ORCID: https://orcid.org/0000-0002-9197-5668)
- Junming Zhang (ORCID: https://orcid.org/0000-0001-5231-4667)
- Ying Li (ORCID: https://orcid.org/0000-0001-8701-1164)
- Yangyi Shen
- Hai Lin
- Kai Ma (ORCID: https://orcid.org/0000-0001-7535-1313)
Institutions
- China Southern Power Grid (China) (CN)
- Zhejiang University (CN)
Publication Details
- Published
- 2024-08-23
- DOI
- https://doi.org/10.1109/isset62871.2024.10779907
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21