Research on Physical Model and Simulation of 4.5kV Si IGBT Device Based on Gradient Field Ring Terminal

IGBT (Insulate Gate Bipolar Transistor) combines the high frequency and low on-state voltage characteristics of field-effect transistor and bipolar transistor, and is widely used in power electronics system. Due to the continuous expansion of the power market and the increasing application requirements, the importance of the research on the optimization of the physical model and design parameters of high voltage IGBT is still lacking. In this work, a 4.5kV Si-based IGBT structure based on a gradient field ring terminal structure is designed. On the basis of the physical mechanism for the device, the influence of relevant key structural parameters on the performance of the device, such as channel length, p-well doping level, gate oxide quality, etc., is further systematically analyzed. At the same time, the voltage performance of the device under the influence of temperature is also studied, and the corresponding optimization strategy is proposed.