Study on the Characteristics and Mechanism of High-Voltage 4H-SiC Dual-Mode Composite Transistor (DCT)

Aiming at the problems of high on-resistance and poor short-circuit tolerance of 4H-SiC Vertical Double-diffusion MOSFET (VDMOS), a Dual-mode Composite Transistor (DCT) is proposed in this paper, and the static, switching and short circuit characteristics of DCT are studied and compared with VDMOS with current spread layer (CSL) by TCAD simulator. The results show that DCT has higher breakdown voltage, lower on-resistance and better short-circuit performance. When the operation frequency is less than 145kHz, the total power loss of DCT is less than VDMOS.